Intel is famous for innovation on the memory side: After the Optane SSDs (i.e. long-term memories), which can be used in addition to RAM (Random Access Memory), there is STT-MRAM (Spin-Transferable Torque Magnetoresistive Random Access Memory). It was introduced at the SSCC (Solid-State-Circuit-Conference) as an alternative to SRAM (static RAM), which is used especially for processor registers (an almost invisible latency time), but also for NAND (or flash memory), which are located in SSDs and memory cards.
MRAM is not a new technology as it has existed since the 90s. It stores information in the form of magnetic resistors (and not in a capacitor for DRAM or in NAND logic gates for flash memory). It combines the advantages of all types of memory: you can have very dense MRAM with very short access times (about ten nanoseconds for reading and writing), but also without volatility. According to Intel tests, endurance is also a must: a memory cell can survive at least one million cycles, with less than one read error per thousand billion cycles.
Intel concentrates on the STT-MRAM, a special type of magnetic memory: Traditionally, a relatively strong magnetic field is used for the scale under consideration to invert a little. In contrast, STT technology uses a polarized electric current (all electrons have the same spin). This technique uses less energy to change a little, about a tenth of a picojoules (about fifty times less than the usual DRAM, several hundred times less than the flash memory).
Intel is currently producing seven megabytes of components, so they won’t revolutionize the industry. The company uses a relatively old semiconductor manufacturing process (22 nm sound, available since 2011), but achieves an error rate of less than one thousandth. This performance is certainly due to a controlled manufacturing process and a relatively simple design of the MRAM.