SK Hynix has just announced the production of its 176-layer NAND flash memory. Last month Micron announced its 176-layer modules and SK Hynix did the same a month later.
SK Hynix announces its 176-layer NAND flash modules
These new 176-layer NAND flash modules use Peripheral under Cell technology, which maximizes efficiency while improving density. They also promote 4D NAND technology, which Hynix already uses in its 96-layer modules.
SK Hynix’s new flash memory is the third generation of 4D NAND technology, which continues to increase the number of layers, enabling SSDs with increasing capacity without changing size.
“The NAND flash industry is striving to improve technologies for high integration and maximum productivity simultaneously. SK Hynix, as a pioneer of 4D NAND, will lead the NAND flash market with the highest productivity and technology in the industry.” So says Jung Dal Choi, director of NAND development at SK Hynix.
Hynix claims that the 176-layer 4D NAND flash chips improve data transfer rates by 33 percent, thanks to a number of implemented features that improve cell read rates and manage “on-the-fly” cell location and spacing in real-time.
SK Hynix is the second company to announce 176-layer NAND flash modules, the first being Micron. Micron chips were recently introduced in Crucial’s product.
These innovations in NAND flash memory will enable larger SSDs and ultimately lower costs. We will keep you updated as this happens.
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