Intel 'Nanoribbon', the company's future GAAFET transistors

These new transistors are called ‘Nanoribbon’ by Intel. Intel plans to move beyond its FinFET transistor designs in the hope of moving to a new transistor design called GAAFET that will offer higher efficiency and better silicon performance.

Intel ‘Nanoribbon’, the company’s future GAAFET transistors

Intel’s GAAFET is called “Nanoribbon”, a new design that improves the design features of today’s FinFET transistors. Samsung has already introduced its own GAAFET-style transistors incorporating its planned 3nm MBCFET (nanosheet) designs, which will enter critical production in 2020.

GAAFET transistors take the idea of FinFET transistors to the next level and provide full three-dimensional (hence GAA, Gate-All-Around) coverage of the transistor channel. In a basic sense, FinFET places a fin inside the door that has three of four sides covered, while GAAFET transistors have all sides covered. This improved coverage can help reduce power losses and increase the power/watt characteristics of a transistor.

Nanoribbon, Intel ‘Nanoribbon’, the company’s future GAAFET transistors,

By stacking nano boards and changing their width, Intel has great versatility with its GAAFET transistors based on nano boards.

According to the Anandtech’s report, Intel’s CTO, Mike Mayberry, has stated that the company’s nanoribbon technology will go into mass production within the next five years.

Nanoribbon, Intel ‘Nanoribbon’, the company’s future GAAFET transistors,

Intel plans to ship products with its 7nm process in 2021, starting with the Ponte Vecchio HPC accelerators. In addition, Intel has improved the 7nm nodes planned for 2022 and 2023 so that its GAAFET transistors could be used on the 5nm nodes for the first time.