DDR5: Samsung starts mass production with 14nm EUV nodes

Samsung announces that mass production of its DDR5 chips will begin at its semiconductor fabs.

Samsung will use a 14nm node with the new five-layer EUV process for DDR5

The South Korean manufacturer, one of the most important in the industry, announced the start of production of DDR5 DRAM modules in large quantities to be distributed worldwide to various customers who want it, from memory manufacturers, pre-assembled computers, laptops, cell phones, AI, 5G, and many others, in addition to its own products.

DDR5

Samsung will use a 14nm node with the new five-layer EUV process, which enables higher DRAM bit density that would currently be the most advanced in the industry. According to the Asian company, this EUV process will increase productivity by 20 percent.

“We have led the DRAM market for nearly three decades by pioneering key technological innovations in patterning. Today, Samsung is setting another technological milestone with multilayer EUV technology that enables extreme miniaturization at 14nm, which is not possible with the conventional argon fluoride (ArF) process. Building on this breakthrough, we will continue to provide the most differentiated memory solutions by fully meeting the need for higher performance and capacity in the data-driven world of 5G, AI, and the Metaverse.”

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Samsung has refined its EUV process since March last year when it first used it in its DRAM modules. It has now increased the number of layers to produce the industry’s most advanced DDR5 modules.

Using a 14nm process, these modules reduce power consumption by nearly 20% compared to current DRAM modules.

Samsung’s new 14nm DRAM modules are said to achieve speeds of up to 7.2 gigabits per second (Gbps), double that of current DDR4 modules at 3.2 Gbps.