Micron introduces the first UFS 4.0 modules. The new storage drives commonly used in portable devices and Smart TVs aim to further elevate data read and write speeds.
UFS 4.0: Up to 4,300 MB/s storage for upcoming smartphones, tablets, etc.
The new generation of UFS 4.0 storage drives is coming, which promises to boost read and write speeds up to 4,300 MB/s. This will be very beneficial in the new generation of smartphones, with speeds that we would commonly see in some PCIe 4.0 NVME SSDs.
Micron expects its next-generation UFS drives to start being used during this year 2023 in smartphones, tablets and notebooks, delivering remarkable performance gains.
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The manufacturer is going to offer 256 GB, 512 GB and up to 1 TB UFS 4.0 modules, using the company’s own controller. The 512 GB and 1 TB storage use 1 Tb 232-layer 3D NAND TLC 232-layer devices from Micron and can provide a sequential read speed of up to 4,300 MB/s, as well as a sequential write speed of up to 4,000 MB/s. The 256 GB drive is slightly slower with 4-plane 3D NAND. In addition, power efficiency is being commented to be 25% higher than the previous generation.
“Micron’s latest mobile solution combines our best-in-class UFS 4.0 technology, patented low-power controller, 232-layer NAND memory and highly configurable firmware architecture to deliver unmatched performance,” says Mark Montierth, corporate vice president and general manager of Micron’s Mobile Business Unit.
In addition to the obvious improvements in efficiency and performance, there is also a gain in physical space. Micron claims that these new memory units have az-height of between 0.8 and 0.9 mm, allowing thinner devices to be designed than ever before.
We should see it in action during the second half of this year 2023.