To get 3D NAND beyond 128 layers, the industry is secretly working on a scheme called string technology of stacking (string stacking). In development, string stacking consists of a single 3D NAND device stacked on top of each other. For example, if three 64-layer 3D NAND devices were stacked vertically, the resulting chip would be a 192-layer product. This is one way of federating individual layered 64 devices using some sort of interconnection scheme.
Samsung was the pioneer behind 3D NAND, the technology that has transformed SSDs from high-end offerings to increasingly affordable units for the masses.
Samsung announces new 3D NAND ”string stacking” technology
With its latest V-NAND, Samsung now offers its customers more than 100 three-dimensional NAND layers, and its 6th generation offers 40% more cells per stack, 10% more power and 15% less energy consumption.
For the future, Samsung plans to deliver a greater number of V-NAND layers (over 200), higher storage speeds, and technology that goes beyond what we know as V-NAND.
Now Samsung is ready to reveal the future of its technology and highlight what they call “string stacking”. This technology will enable the company to offer larger V-NAND stacks by stacking layers on top of each other. In combination with 3D process improvements, Samsung will pave the way for higher capacity SSDs and new storage solutions for PCs, servers, and business systems.
Samsung is expected to continue offering higher 3D NAND densities and bigger SSDs for the “normal” user in the future. Only time will tell how these innovations will impact the market and whether they can help reduce the cost per GB. We will keep you up to date.