Micron initiates batch processing of 3D NAND with 128 layers
Micron has announced that the company is about to begin series production of its fourth-generation 3D NAND storage devices. Based on the company’s new Replacement Gate (RG) architecture, the memory manufacturer is preparing to begin production in the current quarter, i.e. this quarter. Micron begins mass production of 128-layer 3D NAND As Micron stated, the … Read more